PREFACE ; CHAPTER 1: REVIEW OF FUNDAMENTALS AND MOSFET OVERVIEW ; 1.1 INTRODUCTION ; 1.2 SEMICONDUCTORS ; 1.2.1 INTRINSIC SEMICONDUCTORS, FREE ELECTRONS, AND HOLES ; 1.2.2 EXTRINSIC SEMICONDUCTORS ; 1.2.3 EQUILIBRIUM IN THE ABSENCE OF ELECTRIC FIELD ; 1.2.4 EQUILIBRIUM IN THE PRESENCE OF ELECTRIC FIELD ; 1.2.5 NONEQUILIBRIUM; QUASI-FERMI LEVELS ; 1.2.6 RELATIONS BETWEEN CHARGE DENSITY, ELECTRIC FIELD, AND POTENTIALS; POISSON'S EQUATION ; 1.3 CONDUCTION ; 1.3.1 TRANSIT TIME ; 1.3.2 DRIFT ; 1.3.3 DIFFUSION ; 1.3.4 TOTAL CURRENT ; 1.4 CONTACT POTENTIALS ; 1.5 THE PN JUNCTION ; 1.6 OVERVIEW OF THE MOS TRANSISTOR ; 1.6.1 BASIC STRUCTURE ; 1.6.2 A QUALITATIVE DESCRIPTION OF MOS TRANSISTOR OPERATION ; 1.6.3 A FLUID DYNAMICAL ANALOG ; 1.6.4 MOS TRANSISTOR CHARACTERISTICS ; 1.7 FABRICATION PROCESSES AND DEVICE FEATURES ; 1.8 A BRIEF OVERVIEW OF THIS BOOK ; REFERENCES ; PROBLEMS ; CHAPTER 2: THE MOS CAPACITOR ; 2.1 INTRODUCTION ; 2.2 THE FLATBAND VOLTAGE ; 2.3 POTENTIAL BALANCE AND CHARGE BALANCE ; 2.4 EFFECT OF GATE-BODY VOLTAGE ON SURFACE CONDITION ; 2.4.1 FLATBAND CONDITION ; 2.4.2 ACCUMULATION ; 2.4.3 DEPLETION AND INVERSION ; 2.4.4 GENERAL ANALYSIS ; 2.5 ACCUMULATION AND DEPLETION ; 2.6 INVERSION ; 2.6.1 GENERAL RELATIONS AND REGIONS OF INVERSION ; 2.6.2 STRONG INVERSION ; 2.6.3 WEAK INVERSION ; 2.6.4 MODERATE INVERSION ; 2.7 SMALL-SIGNAL CAPACITANCE ; 2.8 SUMMARY OF PROPERTIES OF THE REGIONS OF INVERSION ; REFERENCES ; PROBLEMS ; CHAPTER 3: THE THREE-TERMINAL MOS STRUCTURE ; 3.1 INTRODUCTION ; 3.2 CONTACTING THE INVERSION LAYER ; 3.3 THE BODY EFFECT ; 3.4 REGIONS OF INVERSION ; 3.4.1 APPROXIMATE LIMITS ; 3.4.2 STRONG INVERSION ; 3.4.3 WEAK INVERSION ; 3.4.4 MODERATE INVERSION ; 3.5 A "V[C[B CONTROL" POINT OF VIEW ; 3.5.1 FUNDAMENTALS ; 3.5.2 THE "PINCHOFF VOLTAGE" ; REFERENCES ; PROBLEMS ; CHAPTER 4: THE FOUR-TERMINAL MOS TRANSISTOR ; 4.1 INTRODUCTION ; 4.2 TRANSISTOR REGIONS OF OPERATION ; 4.3 COMPLETE ALL-REGION MODEL ; 4.4 SIMPLIFIED ALL-REGION MODELS ; 4.4.1 LINEARIZING THE DEPLETION REGION CHARGE ; 4.4.2 BODY-REFERENCED SIMPLIFIED ALL-REGION MODELS ; 4.4.3 SOURCE-REFERENCED SIMPLIFIED ALL-REGION MODELS ; 4.4.4 CHARGE FORMULATION OF SIMPLIFIED ALL-REGION MODELS ; 4.5 MODELS BASED ON QUASI-FERMI POTENTIALS ; 4.6 REGIONS OF INVERSION IN TERMS OF TERMINAL VOLTAGES ; 4.7 STRONG INVERSION ; 4.7.1 COMPLETE STRONG-INVERSION MODEL ; 4.7.2 BODY-REFERENCED SIMPLIFIED STRONG-INVERSION MODEL ; 4.7.3 SOURCE-REFERENCED SIMPLIFIED STRONG-INVERSION MODEL ; 4.7.4 MODEL ORIGIN SUMMARY ; 4.8 WEAK INVERSION ; 4.8.1 SPECIAL CONDITIONS IN WEAK INVERSION ; 4.8.2 BODY-REFERENCED MODEL ; 4.8.3 SOURCE-REFERENCED MODEL ; 4.9 MODERATE-INVERSION AND SINGLE-PIECE MODELS ; 4.10 SOURCE-REFERENCED VS. BODY-REFERENCED MODELING ; 4.11 EFFECTIVE MOBILITY ; 4.12 EFFECT OF EXTRINSIC SOURCE AND DRAIN SERIES RESISTANCES ; 4.13 TEMPERATURE EFFECTS ; 4.14 BREAKDOWN ; 4.15 THE P-CHANNEL MOS TRANSISTOR ; 4.16 ENHANCEMENT-MODE AND DEPLETION-MODE TRANSISTORS ; 4.17 MODEL PARAMETER VALUES, MODEL ACCURACY, AND MODEL COMPARISON ; REFERENCES ; PROBLEMS ; CHAPTER 5: SMALL-CHANNEL AND THIN OXIDE EFFECTS ; 5.1 INTRODUCTION ; 5.2 CARRIER VELOCITY SATURATION ; 5.3 CHANNEL LENGTH MODULATION ; 5.4 CHARGE SHARING ; 5.4.1 INTRODUCTION ; 5.4.2 SHORT-CHANNEL DEVICES ; 5.4.3 NARROW-CHANNEL DEVICES ; 5.4.4 LIMITATIONS OF CHARGE-SHARING MODELS ; 5.5 DRAIN-INDUCED BARRIER LOWERING ; 5.6 PUNCHTHROUGH ; 5.7 COMBINING SEVERAL SMALL-DIMENSION EFFECTS INTO ONE MODEL-A STRONG-INVERSION EXAMPLE ; 5.8 HOT CARRIER EFFECTS; IMPACT IONIZATION ; 5.9 VELOCITY OVERSHOOT AND BALLISTIC OPERATION ; 5.10 POLYSILICON DEPLETION ; 5.11 QUANTUM MECHANICAL EFFECTS ; 5.12 DC GATE CURRENT ; 5.13 JUNCTION LEAKAGE; BAND-TO-BAND TUNNELING; GIDL ; 5.14 LEAKAGE CURRENTS-PARTICULAR CASES ; 5.15 THE QUEST FOR EVER-SMALLER DEVICES ; 5.15.1 INTRODUCTION ; 5.15.2 CLASSICAL SCALING ; 5.15.3 MODERN SCALING ; REFERENCES ; PROBLEMS ; CHAPTER 6: LARGE-SIGNAL MODELING OF THE MOS TRANSISTOR IN TRANSIENT OPERATION ; 6.1 INTRODUCTION ; 6.2 QUASI-STATIC OPERATION ; 6.3 TERMINAL CURRENTS IN QUASI-STATIC OPERATION ; 6.4 EVALUATION OF INTRINSIC CHARGERS IN QUASI-STATIC OPERATION ; 6.4.1 INTRODUCTION ; 6.4.2 STRONG INVERSION ; 6.4.3 MODERATE INVERSION ; 6.4.4 WEAK INVERSION ; 6.4.5 ALL-REGION MODEL ; 6.4.6 DEPLETION AND ACCUMULATION ; 6.4.7 PLOTS OF CHARGES VS. V[G[S ; 6.5 TRANSIT TIME UNDER DC CONDITIONS ; 6.6 LIMITATIONS OF THE QUASI-STATIC MODEL ; 6.7 NON-QUASI-STATIC MODELING ; 6.7.1 INTRODUCTION ; 6.7.2 THE CONTINUITY EQUATION ; 6.7.3 NON-QUASI-STATIC ANALYSIS ; 6.8 EXTRINSIC PARASITICS ; 6.8.1 EXTRINSIC CAPACITANCES ; 6.8.2 EXTRINSIC RESISTANCE ; 6.8.3 TEMPERATURE DEPENDENCE ; 6.8.4 SIMPLIFIED MODELS ; REFERENCES ; PROBLEMS ; CHAPTER 7: SMALL-SIGNAL MODELING FOR LOW AND MEDIUM FREQUENCIES ; 7.1 INTRODUCTION ; 7.2 A LOW-FREQUENCY SMALL-SIGNAL MODEL FOR THE INTRINSIC PART ; 7.2.1 INTRODUCTION ; 7.2.2 SMALL-SIGNAL MODEL FOR THE DRAIN-TO-SOURCE CURRENT ; 7.2.3 SMALL-SIGNAL MODEL FOR THE GATE AND BODY CURRENTS ; 7.2.4 COMPLETE LOW-FREQUENCY SMALL-SIGNAL MODEL FOR THE INTRINSIC PART ; 7.2.5 STRONG INVERSION ; 7.2.6 WEAK INVERSION ; 7.2.7 MODERATE INVERSION ; 7.2.8 ALL-REGION MODELS ; 7.3 A MEDIUM-FREQUENCY SMALL-SIGNAL MODEL FOR THE INTRINSIC PART ; 7.3.1 INTRODUCTION ; 7.3.2 INTRINSIC CAPACITANCES ; 7.4 INCLUDING THE EXTRINSIC PART ; 7.5 NOISE ; 7.5.1 INTRODUCTION ; 7.5.2 WHITE NOISE ; 7.5.3 FLICKER NOISE ; 7.5.4 NOISE IN EXTRINSIC RESISTANCES ; 7.5.5. INCLUDING NOISE IN SMALL-SIGNAL CIRCUITS ; 7.6 ALL-REGION MODELS ; REFERENCES ; PROBLEMS ; CHAPTER 8: SMALL-SIGNAL MODELING FOR HIGH-FREQUENCY OPERATION ; 8.1 INTRODUCTION ; 8.2 A COMPLETE QUASI-STATIC MODEL FOR THE INTRINSIC PART ; 8.2.1 COMPLETE DESCRIPTION OF INTRINSIC CAPACITANCE EFFECTS ; 8.2.2 SMALL-SIGNAL EQUIVALENT CIRCUIT TOPOLOGIES ; 8.2.3 EVALUATION OF CAPACITANCES ; 8.2.4 FREQUENCY REGION OF VALIDITY ; 8.3 Y-PARAMETER MODELS ; 8.4 NON-QUASI-STATIC MODELS ; 8.4.1 INTRODUCTION ; 8.4.2 A NON-QUASI-STATIC STRONG-INVERSION MODEL ; 8.4.3 OTHER APPROXIMATIONS AND HIGHER-ORDER MODELS ; 8.4.4 MODEL COMPARISON ; 8.5 HIGH-FREQUENCY NOISE ; 8.6 CONSIDERATION IN ; REFERENCES ; PROBLEMS ; CHAPTER 9: SUBSTRATE NONUNIFORMITY AND OTHER STRUCTURAL EFFECTS ; 9.1 INTRODUCTION ; 9.2 ION IMPLANTATION AND SUBSTRATE NONUNIFORMITY ; 9.3 SUBSTRATE TRANSVERSE NONUNIFORMITY ; 9.3.1 PRELIMINARIES ; 9.3.2 THRESHOLD VOLTAGE ; 9.3.3 DRAIN CURRENT ; 9.3.4 BURIED-CHANNEL DEVICES ; 9.4 SUBSTRATE LATERAL NONUNIFORMITY ; 9.5 WELL PROXIMITY EFFECT ; 9.6 STRESS EFFECTS ; 9.7 STATISTICAL VARIABILITY ; REFERENCES ; PROBLEMS ; CHAPTER 10: MODELING FOR CIRCUIT SIMULATION ; 10.1 INTRODUCTION ; 10.2 TYPES OF MODELS ; 10.2.1 MODELS FOR DEVICE ANALYSIS AND DESIGN ; 10.2.2 DEVICE MODELS FOR CIRCUIT SIMULATION ; 10.3 ATTRIBUTES OF GOOD COMPACT MODELS ; 10.4 MODEL FORMULATION ; 10.4.1 GENERAL CONSIDERATION AND CHOICES ; 10.5 MODEL IMPLEMENTATION IN CIRCUIT SIMULATORS ; 10.6 MODEL TESTING ; 10.7 PARAMETER EXTRACTION ; 10.8 SIMULATION AND EXTRACTION FOR RF APPLICATIONS ; 10.9 COMMON MOSFET MODELS AVAILABLE IN CIRCUIT SIMULATORS ; 10.9.1 BSIM ; 10.9.2 EKV ; 10.9.3 PSP ; 10.9.4 OTHER MODELS ; REFERENCES ; PROBLEMS ; APPENDICES ; A. BASIC LAWS OF ELECTROSTATIC IN ONE DIMENSION ; B. QUASI-FERMI LEVELS AND CURRENTS ; C. GENERAL ANALYSIS OF THE TWO-TERMINAL MOS STRUCTURE ; D. CAREFUL DEFINITIONS FOR THE LIMITS OF MODERATE INVERSION ; E. GENERAL ANALYSIS OF THE THREE-TERMINAL MOS STRUCTURE ; F. DRAIN CURRENT FORMULATION USING QUASI-FERMI POTENTIALS ; G. MODELING BASED ON PINCHOFF VOLTAGE AND RELATED TOPICS ; H. EVALUATION OF THE INTRINSIC TRANSIENT SOURCE AND DRAIN CURRENTS ; I. QUANTITIES USED IN THE DERIVATION OF THE NON-QUASI-STATIC Y-PARAMETER MODEL ; K. ANALYSIS OF BURIED-CHANNEL DEVICES ; L. MOSFET MODEL BENCHMARK TESTS ; INDEX